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Ordering number : ENN6795
MCH6614
N-Channel and P-Channel Silicon MOSFET
MCH6614
Ultrahigh-Speed Switching Applications
Features
*
Package Dimensions
* *
The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby enabling high-density mounting. 0.3 Low ON-resistance. 6 2.5V drive.
1
[MCH6614]
0.25
0.15
5
4
1.6 0.25 2.1
23 0.65
2.0
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 10 0.35 1.4 0.8 150 --55 to +150 P-channel -30 10 --0.4 --1.6 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 150 220 2.9 3.7 6.4 3.7 5.2 12.8 30 10 10 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : FN
0.15
0.85
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM 20101 TS IM TA-2909 No.6795-1/6
MCH6614
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--100A VDS=-10V, ID=--100mA ID=-100mA, VGS=--4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=--10V, ID=--200mA VDS=-10V, VGS=--10V, ID=--200mA VDS=-10V, VGS=--10V, ID=--200mA IS=--200mA, VGS=0 --0.4 210 300 2.4 3.5 10 28 15 5.2 24 75 200 150 2 0.25 0.35 --0.82 --1.2 3.1 4.9 20 --30 --10 10 --1.4 V A A V mS pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit [N-channel]
VIN VIN VDD=15V ID=80mA RL=187.5
[P-channel]
VIN VIN VDD= --15V ID= --100mA RL=150
4V 0V
0V --4V
PW=10s D.C.1%
D G
VOUT
PW=10s D.C.1%
D G
VOUT
MCH6614 P.G 50 P.G
MCH6614 50
S
S
Electrical Connection
D1 G2 S2
(Top view)
S1
G1
D2
No.6795-2/6
MCH6614
0.16 0.14 0.12 0.10 0.08
ID -- VDS
3.0 V
3.5V 4.0V
[Nch]
--0.20 --0.18 --0.16
ID -- VDS
--4 .
[Pch]
2. 5V
2.0
V
--3 .0
--3.5V
Drain Current, ID -- A
Drain Current, ID -- A
--2 .5 V
--0.14 --0.12 --0.10 --0.08 --0.06
--6.
0V
0V
V
. --2
6.0
0V
V
VGS=1.5V
0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029
VGS= --1.5V
--0.04 --0.02 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
0.30
ID -- VGS
Drain-to-Source Voltage, VDS -- V
--0.40 --0.35
IT00237
[Nch]
ID -- VGS
[Pch] VDS= --10V
25
C
VDS=10V
0.25
5C Ta= -2
0 --0.5 --1.0 --1.5 --2.0
Ta= --
C
Drain Current, ID -- A
Drain Current, ID -- A
--0.30 --0.25 --0.20 --0.15 --0.10 --0.05
25
0.15
0.10
0.05
75
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030
0 --2.5 --3.0 --3.5
Gate-to-Source Voltage, VGS -- V
10 9
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
8 7 6 5
75
0.20
C
C
25C
IT00238
[Nch] Ta=25C
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
ID=80mA 40mA
Static Drain-to-Source On-State Resistance, RDS(on) --
ID= --100mA
4 3 2 1 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--50mA
Gate-to-Source Voltage, VGS -- V
10
IT00031
Gate-to-Source Voltage, VGS -- V
10
IT00239
RDS(on) -- ID
[Nch] VGS=4V
RDS(on) -- ID
[Pch] VGS= --4V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
7
5
5
Ta=75C
3
25C --25C
3
Ta=75C 25C
2
2
--25C
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00032
1.0 --0.01
2
3
5
7
--0.1
2
3
5 IT00240
Drain Current, ID -- A
Drain Current, ID -- A
No.6795-3/6
MCH6614
10
RDS(on) -- ID
[Nch] VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) --
10
RDS(on) -- ID
[Pch] VGS= --2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
7
5
Ta=75C 25C
5
Ta=75C 25C
3
--25C
3
--25C
2
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 --0.01
2
3
5
7
--0.1
2
3
5 IT00241
Drain Current, ID -- A
100 7
RDS(on) -- ID
Drain Current, ID -- A
100 7
[Nch] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) --
RDS(on) -- ID
[Pch] VGS= --1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
5 3 2
Ta=75C
10 7 5 3 2
10 7 5 3 2
Ta=75C --25C 25C
25C
--25C
1.0 0.001
2
3
5
7
0.01
2
3
1.0 --0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
7
IT00034
Drain Current, ID -- A
7
IT00242
RDS(on) -- Ta
[Nch]
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
6
6
5
4
3
40m 4.0V S= I D= A, VG 80m I D=
G A, V
2. S=
5V
5
4
3
--5 ID=
0mA
= --2 , V GS
.5V
--1 I D=
2
0
, VG 0mA
--4 S=
.0V
2
1 0 --60
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
1.0
yfs -- ID
IT00035
Ambient Temperature, Ta -- C
1.0
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, yfs -- S
7 5 3 2
[Nch] VDS=10V
yfs -- ID
IT00243
7 5 3 2
[Pch] VDS= --10V
C --25 Ta= 75C
25C
-Ta=
25C
75C
0.1 7 5 3 2
0.1 7 5 3 2
25
C
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
0.01 --0.01
2
3
5
7
--0.1
2
3
5 IT00244
Drain Current, ID -- A
Drain Current, ID -- A
No.6795-4/6
MCH6614
5 3
IF -- VSD
[Nch] VGS=0
5 3
IF -- VSD
VGS=0
[Pch]
Forward Current, IF -- A
0.1 7 5 3 2
Forward Current, IF -- A
2
2
5 C
--0.1 7 5
Ta= 7
25
C
--25
C
Ta= 75C
2
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
--0.01 --0.4
--0.5
--0.6
--0.7
--25C
--0.8
3
25C
--0.9
--1.0 IT00245
Diode Forward Voltage, VSD -- V
1000 7
SW Time -- ID
Diode Forward Voltage, VSD -- V
1000 7
Switching Time, SW Time -- ns
3 2
Switching Time, SW Time -- ns
5
[Nch] VDD=15V VGS=4V
SW Time -- ID
[Pch] VDD= --15V VGS= --4V
5 3 2
td(off)
tf tr
td(off) tf tr td(on)
100 7 5 3 2
100 7 5 3 2
td(on)
10 0.01
2
3
5
7
0.1
2 IT00038
10 --0.01
2
3
5
7
--0.1
2
3
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
[Nch] f=1MHz
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT00246
[Pch] f=1MHz
Ciss, Coss, Crss -- pF
3 2
Ciss, Coss, Crss -- pF
3 2
Ciss Coss
10 7 5 3 2
10 7 5 3 2 1.0
Ciss Coss
Crss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0
--5
--10
--15
--20
--25
--30 IT00247
Drain-to-Source Voltage, VDS -- V
10 9
IT00039
Drain-to-Source Voltage, VDS -- V
--10 --9
VGS -- Qg
VDS=10V ID=150mA
[Nch] VDS= --10V ID= --200mA
VGS -- Qg
[Pch]
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
8 7 6 5 4 3 2 1 0 0 0.2
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 IT00248
Total Gate Charge, Qg -- nC
IT00040
Total Gate Charge, Qg -- nC
No.6795-5/6
MCH6614
ASO
3 2 1.0
[Nch]
3
ASO
2 --1.0
[Pch] <10s 1m s
10 ms
IDP=1.4A
<10s
1m s
Drain Current, ID -- A
IDP= --1.6A
Drain Current, ID -- A
7 5 3 2 0.1 7 5 3 2
7 5 3 2 --0.1 7 5 3 2
ID=0.35A Operation in this area is limited by RDS(on).
DC
10
ms
ID= --0.4A
10
ope
0m
s
rat
ion
10 0m s DC Operation in ope this area is rat ion limited by RDS(on).
0.01 1.0
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 10 2 3 5
--0.01 --1.0
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 --10 2 3 5 IT02516
1.0
Drain-to-Source Voltage, VDS -- V IT02517 PD -- Ta [Pch, Nch]
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
ard
0.4
(90
0m
m2 !0
.8m
0.2
m)
1u
nit
140 160
0 0 20 40 60 80 100 120
Amibient Tamperature, Ta -- C
IT02518
Note on usage : Since the MCH6614 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
PS No.6795-6/6

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